Loading...
News Article

NICT-Sony collaboration makes laser breakthrough

News
Practical surface-emitting laser for 1500nm comms uses quantum dots as gain medium

Japan's National Institute of Information and Communications Technology (NICT) in collaboration with Sony Semiconductor has developed what is claims is the world's first practical surface-emitting laser for 1550nm comms that employs quantum dots (QD) as the optical gain medium.

The results of this research 'Electrically pumped laser oscillation of C-band InAs quantum dot vertical-cavity surface-emitting lasers on InP(311)B substrate' were published in Optics Express, in March year.

This innovation not only facilitates the miniaturisation and reduced power consumption of light sources in optical fibre communications systems but also offers potential cost reductions through mass production and enhanced output via integration, according to the researchers.

NICT's role was to develop the reflective semiconductor multilayer fabrication and quantum dot crystal growth technology using MBE. Sony undertook the device design for the entire VCSEL structure and device process technology.

Fabricating a VCSEL requires growing a highly reflective semiconductor multilayer film (DBR: Distributed Bragg Reflector) to enhance light intensity; however, fabricating DBRs that operate at 1550 nm has been challenging because the combination of materials that can be grown is limited. In this study, the NICT team developed a technology that can precisely grow DBR by strictly controlling the ratio of materials in the crystal growth and realised a semiconductor DBR with a high reflectivity exceeding 99 percent even at 1550 nm.

In addition, strain-compensation techniques were applied to the VCSEL production to accurately cancel the internal crystal strain (strain generated within the material) that occurs around the quantum dots, thereby significantly increasing the density of the quantum dots and improving the light-emitting performance.

Sony contributed: a device design and fabrication process that enables highly efficient current injection employing a tunnel junction. VCSELs emit light perpendicular to the wafer surface; therefore, even if quantum dots emit light, conventional electrode placement obstructs light extraction. Sony addressed this by implementing a tunnel junction structure that permits efficient current flow while facilitating light extraction employing a precise device process.

Through the integration of these two technologies, the team succeeded in lasing VCSELs using quantum dots at 1550 nm as a light-emitting material with a small current of 13 mA (low threshold). Furthermore, polarisation fluctuations were eliminated, resulting in a stable output.

In the future, the researchers hope to develop the quantum-dot-based VCSEL technology further to enhance the capacity and reduce power consumption in optical fibre communication systems beyond 5G era.

×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: